elektr onisch e bauelemen te ssg9435 p-ch enhancement mode power mosfet -5.3 a , -30 v , r ds(on ) 55 m? 10-aug-2 010 r ev . c page 1 of 5 rohs compliant product a suf fix of ?-c? sp ecifies halogen & lead-free des cript ion the ssg943 5 provide the desi gne r with the best co m binati on of fa st swit chin g, rugge dized de vice de sign, l ow on-re sist an ce and co st-ef f e c tivene ss. th e sop-8 p ackag e is unive rsally p r eferre d for all com mercial-i ndu strial surfa c e m oun t applicatio ns and suited for low volt age a pplication s su ch a s dc/dc conve r ters. fea t ures simple drive requirement lower on -resist an c e fast switchin g perform an c e p a ckage dimensions absolut e maximum ra tings parameter sy mbol p-ch ratings unit drai n-so urce v olt age v ds -3 0 v v e g a t l o v e c r u o s - e t a g gs 20 v contin uou s drain current 3 ,vgs@ 10v i d @ t a=2 5 -5.3 a contin uou s drain current 3 ,vgs@ 10v i d @ t a=7 0 -4.7 a pulsed drain curre nt 1 , i d m -2 0 a t ot al powe r dissi p ation p d @ t a= 2 5 2.5 w operati n g jun c tion a n d s t ora g e t e mperature ra n g e tj , t s tg -55 ~ + 15 0 2 0 . 0 r o t c a f g n i t a r e d r a e n i l w / th er ma l d a t a parameter sy mbol v alue unit therm al re si st an ce jun c ti on-a mbie nt max. r j-am b 50 / w 0.25 dimensions in millimeters 6.20 5.80 1.27typ. 0.35 0.49 4.80 5.00 0 0.100.25 1.35 1.75 0.40 0.90 0.19 0.25 3.80 4.00 0.375 ref o 8 o 45 o sop-8 s s s g d d d d 9435sc date code 1 5 7 8 2 3 4 6 s d g
elektr onisch e bauelemen te ssg9435 p-ch enhancement mode power mosfet -5.3 a , -30 v , r ds(on ) 55 m? 10-aug-2 010 r ev . c page 2 of 5 p-channe l ele c t r ical charact e r istics (tj = 25 c unles s other w i s e specifie d) parameter sy mbol min. t y p. max. unit t es t con diti ons drai n-so urce breakdo wn v olt age b v dss -30 - - v v g s =0 , i d =-250ua brea kdo w n v olt age t emp. coef fici ent b v ds s / t j - -0.03 7 - v / re fe r en c e to 2 5 , i d =-1 m a gate thresho ld v olt age v g s (t h ) -1.0 - -3.0 v v ds = v g s , i d =-2 50ua forward t r an scond uct an c e g fs - 10 - s v ds =-1 0 v , i d =-5.3a gate-so urce lea kag e cu rrent i g s s - - 10 0 na v g s = 16v drain- s our c e l eak a ge c urre n t ( t j = 2 5 ) - - -1 ua v ds =-3 0 v , v g s =0 drain- s our c e l eak a ge c urre n t ( t j = 7 0 ) i dss - - -5 ua v ds =-2 4 v , v g s =0 - - 55 v g s =-10v , i d =-5.3a s t atic drain-s ource on -re s ist an c e r ds(on) - - 90 m ? v g s =-4.5 v , i d =-4.2 a t ot al gate ch arge 2 q g - 28 - gate-so urce cha r ge q gs - 3 - gate-drain (?miller?) change q gd - 7 - nc i d =-5.3 a v ds =-15 v v g s =-10 v t ur n- o n d el a y t ime 2 t d(on) - 9 - ris e t ime t r - 15 - t ur n- of f d el a y t ime t d(of f) - 75 - fall t ime t f - 40 - ns v ds =-15 v i d =-1 a v g s =-10 v r g =6 ? r d = 1 5 ? input ca p a cit ance c i s s - 74 5 - output ca p a cit an c e c o s s - 44 0 - rev erse t r an s f er ca p ac i t a nc e c r s s - 12 0 - pf v g s =0 v v ds =-15 v f=1.0 mhz so urc e -dra in d i od e parameter sy mbol min. t y p. max. unit t es t con diti ons forward on v olt age 2 v s d - -0.75 - 1.2 v i s =-2.6a, v g s =0 v , t j = 2 5 c cont i nu o us s o urce cur r ent (bo d y d i ode) i s - - -2.6 a pulse d sourc e current (b od y diod e ) 1 i s m - - -20 a v d = v g = 0 v , v s = -1 .2 v not es: 1. pulse w i d th limit ed b y ma x. ju nct ion t emperat u r e. 2. pulse w i d th Q 300u s, dut y c y c l e Q 2%.
elektr onisch e bauelemen te ssg9435 p-ch enhancement mode power mosfet -5.3 a , -30 v , r ds(on ) 55 m? 10-aug-2 010 r ev . c page 3 of 5 charac t er isti c cu r ve
elektr onisch e bauelemen te ssg9435 p-ch enhancement mode power mosfet -5.3 a , -30 v , r ds(on ) 55 m? 10-aug-2 010 r ev . c page 4 of 5 charac t eristic cur ve (co nt?d)
elektr onisch e bauelemen te ssg9435 p-ch enhancement mode power mosfet -5.3 a , -30 v , r ds(on ) 55 m? 10-aug-2 010 r ev . c page 5 of 5 charac t eristic cur ve (co nt?d)
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